A Word Line Pulse Circuit Technique for Reliable Magnetoelectric Random Access Memory

Purely antiferromagnetic magnetoelectric random access memory

Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances a...

Low Power March Memory Test Algorithm for Static Random Access Memories (TECHNICAL NOTE)

Memories are most important building blocks in many digital systems. As the Integrated Circuits requirements are growing, the test circuitry must grow as well. There is a need for more efficient test techniques with low power and high speed. Many Memory Built in Self-Test techniques have been proposed to test memories. Compared with combinational and sequential circuits memory testing utilizes ...

Holographic Random Access Memory

We examine the primary challenges for building a practical and competitive holographic random access memory (HRAM) system, specifically for size, speed, and cost. We show that a fast HRAM system can be implemented with a compact architecture by incorporating conjugate readout, a pixel-matched sensor array, and a linear array of laser diodes. It provides faster random access time than hard disk ...

Magnetoelectric domain wall dynamics and its implications for magnetoelectric memory

A Magnetoelectric Energy Harvester and Management Circuit

This paper proposes an H-type magnetoelectric (ME) composite structure consisting of a fork Fe-Ni magnetostrictive substrate and PZT piezoelectric plates. The fork composite structure has a higher ME voltage coefficient and a higher ME power output relative to other ME composite structures due to its higher quality (Q) factor. The fork composite structure can obtain an output power of 61μW at a...